Trench transistor and method for fabricating a trench...

Details Trench transistor and method for fabricating a trench... Trench transistor and method for fabricating a trench...

2006-08-31

2008-08-19

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000

Reexamination Certificate

active

07414286

ABSTRACT:
A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter. There is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure.

REFERENCES:
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2006/0214221 (2006-09-01), Challa et al.
patent: 102 97 349 (2005-01-01), None
patent: 103 39 455 (2005-05-01), None
patent: WO 2005/053032 (2005-06-01), None

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