Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-07
2006-11-07
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S331000
Reexamination Certificate
active
07132712
ABSTRACT:
In accordance with an embodiment of the invention, a semiconductor structure includes a semiconductor region having a P-type region and a N-type region forming a PN junction therebetween. A first trench extends in the semiconductor region adjacent at least one of the P-type and N-type regions. The first trench includes at least one diode therein.
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Kocon Christopher Boguslaw
Yedinak Joseph Andrew
Fairchild Semiconductor Corporation
Wojciechowicz Edward
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