Trench structure and method of forming trench structure

Details Trench structure and method of forming trench structure Trench structure and method of forming trench structure

2007-04-18

2010-10-05

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07808028

ABSTRACT:
Disclosed are embodiments of an improved deep trench capacitor structure and memory device that incorporates this deep trench capacitor structure. The deep trench capacitor and memory device embodiments are formed on a semiconductor-on-insulator (SOI) wafer such that the insulator layer remains intact during subsequent deep trench etch processes and, optionally, such that the deep trench of the deep trench capacitor has different shapes and sizes at different depths. By forming the deep trench with different shapes and sizes at different depths the capacitance of the capacitor can be selectively varied and the resistance of the buried conductive strap which connects the capacitor to a transistor in a memory device can be reduced.

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