Trench sidewall structure

Details Trench sidewall structure Trench sidewall structure

1992-10-02

1994-02-01

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257297, 257301, 257924, 257751, H01L 2968

Patent

active

052834530

ABSTRACT:
The invention provides a trench sidewall structure and a method of forming and using the same to reduce parasitic sidewall leakage through a trench sidewall, for example from bitline contact to storage node or from storage node to substrate. The method involves placing a polysilicon layer of the same polarity as that of the array well, along with a diffusion barrier layer such an titanium nitride, between the storage node poly and the oxide collar.

REFERENCES:
patent: 4605947 (1986-08-01), Price et al.
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4689871 (1987-09-01), Malhi
patent: 4783248 (1988-11-01), Kohlhase et al.
patent: 4914739 (1990-04-01), Malhi
patent: 4914740 (1990-04-01), Kenney
patent: 4920389 (1990-04-01), Itoh
patent: 5021849 (1991-06-01), Pfiester et al.
patent: 5164333 (1992-11-01), Schwalke et al.
"Metal-Oxide-Semiconductor Field Effect Transistor with Polysilicon Gate Doped with Same Impurity as Substrate", IBM Technical Disclosure Bulletin, vol. 28, No. 7, Dec. 1985, pp. 3149-3150.

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