Trench-resident interconnect structure

Details Trench-resident interconnect structure Trench-resident interconnect structure

1990-01-19

1991-12-03

Hille, Rolf

357 65, 357 55, 357 46, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

050703889

ABSTRACT:
Interconnect metal is selectively provided in a network of trenches formed in the top surface of a semiconductor substrate containing multiple circuit devices, electrical contact to regions of which is to be provided. The trench network is formed so that it intersects the device regions, thus exposing the regions at sidewalls of the trench. On the floor of the trench a bottom layer of insulator material is provided, and conductive material (such as tungsten) is deposited on or grown from the trench sidewalls, in order to electrically couple device regions to one another. Because the device interconnect employs a trench network, not only are top surface contact apertures unnecessary, but, with a device region contact (from the trench sidewall) being made along the entire width of the region, device resistance can be decreased and performance improved.

REFERENCES:
patent: 4324038 (1982-04-01), Chang et al.
patent: 4502069 (1985-02-01), Schuh
patent: 4711017 (1987-12-01), Lammert
patent: 4903095 (1990-02-01), Chapion
patent: 4903108 (1990-02-01), Young et al.

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