Trench power MOSFET with planarized gate bus

Details Trench power MOSFET with planarized gate bus Trench power MOSFET with planarized gate bus

2005-03-01

2005-03-01

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257S332000, C257S383000, C438S259000, C438S270000, C438S271000, C438S589000

Reexamination Certificate

active

06861701

ABSTRACT:
Power MOSFETs and fabrication processes for power MOSFETs use a continuous conductive gate structure within trenches to avoid problems arising from device topology caused when a gate bus extends above a substrate surface. The conductive gate structure forms gates in device trenches in an active device region and forms a gate bus in a gate bus trench. The gate bus trench that connects to the device trenches can be wide to facilitate forming a gate contact to the gate bus, while the device trenches can be narrow to maximize device density. CMP process can be used to planarize the conductive gate structure and/or overlying insulating layers. The processes are compatible with processes forming self-aligned or conventional contacts in the active device region.

REFERENCES:
patent: 6180979 (2001-01-01), Hofmann et al.
patent: 6291298 (2001-09-01), Williams et al.
patent: 6303436 (2001-10-01), Sung
patent: 6413822 (2002-07-01), Williams et al.
patent: 6476443 (2002-11-01), Kinzer
patent: 6661053 (2003-12-01), Willer et al.
patent: 6673680 (2004-01-01), Calafut
patent: 6717210 (2004-04-01), Takano et al.
patent: 20030080379 (2003-05-01), Oikawa et al.
patent: 20030178673 (2003-09-01), Bhalla et al.
patent: 20040058481 (2004-03-01), Xu et al.

Affiliated with

Also associated with

Rating

Trench power MOSFET with planarized gate bus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench power MOSFET with planarized gate bus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench power MOSFET with planarized gate bus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3429630