Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-09-04
2007-09-04
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
C257SE21483
Reexamination Certificate
active
10831943
ABSTRACT:
The present disclosure provides a method for removing photoresist residue from a low k dielectric above a semiconductor substrate. The method includes creating a first opening in the low k dielectric extending a first depth towards an underlying conductor, and applying and patterning a material above the low k dielectric. In-situ first and second plasma environments are provided, with a bias power being applied to the substrate to attract ion bombardment during the second plasma environment. Trenches can be etched in the low k dielectric, the trenches extending a second depth less than the first depth. Material for the first and second plasmas and the ion bombardment are selected for removing residue of the material from the low k dielectric.
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Geyer Scott B.
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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