Trench MOSFET with trench tip implants

Details Trench MOSFET with trench tip implants Trench MOSFET with trench tip implants

2007-04-10

2007-04-10

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257S327000, C257S329000, C257SE29257, C438S142000, C438S197000, C438S268000, C438S270000

Reexamination Certificate

active

11081893

ABSTRACT:
A trench type power semiconductor device includes a channel region atop an epitaxially silicon layer and a plurality of shallow gate electrode trenches within the channel region such that the bottom of each trench extends to a distance above the junction defined by the channel region and epitaxially silicon layer. Formed at the bottom of each trench within the channel region are trench tip implants of the same conductivity as the epitaxial silicon layer. The trench tip implants extend through the channel region and into the epitaxially silicon layer. The tips effectively pull up the drift region of the device in a localized fashion. In addition, an insulation layer lines the sidewalls and bottom of each trench such that the insulation layer is thicker along the trench bottoms than along the trench sidewalls. Among other benefits, the shallow trenches, trench tips, and variable trench insulation layer allow for reduced on-state resistance and reduced gate-to-drain charge.

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A Novel Technique for Fabricating High Reliaboe Trench DMOSFETs Using Self-Align Technique and Hydrogen Annealing Jongdae Kim et al., IEEE Transactions on Electron Devices, vol. 50, No. 2, Feb. 2003.
A New Power W-Gated Trench MOSFET (WMOSFET) with High Switching Performance, Mohamed Darwish et al., pp. 24-27, ISPSD 2003, Apr. 14-17, Cambridge, United Kingdom.

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