Trench MOSFET with trench source contact having copper wire...

Details Trench MOSFET with trench source contact having copper wire... Trench MOSFET with trench source contact having copper wire...

2008-11-26

2010-12-07

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S343000, C438S284000, C438S286000

Reexamination Certificate

active

07847346

ABSTRACT:
A trench MOSFET with trench source contact structure having copper wire bonding is disclosed. By employing the proposed structure, die size can be shrunk into 30%˜70% with high cell density, and the spreading resistance is significantly reduce without adding expensive thick metal layer as prior art. To further reduce fabricating cost, copper wire bonding is used with requirement of thick Al alloys.

REFERENCES:
patent: 5629543 (1997-05-01), Hshieh et al.
patent: 7629634 (2009-12-01), Hsieh
patent: 2008/0080112 (2008-04-01), Lin et al.

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