Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-16
2009-12-08
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S377000, C257S382000, C257S412000, C257S413000, C257S518000, C257S520000, C257S554000, C257S576000, C257S755000, C257S411000, C257SE29255, C257SE21409, C438S270000, C438S589000, C438S197000, C438S287000, C438S296000
Reexamination Certificate
active
07629646
ABSTRACT:
A trench metal oxide semiconductor field effect transistor (MOSFET) with a terraced trench gate. An epitaxial layer with a plurality of trenches is provided and a gate oxide layer is covered the sidewalls and bottoms of the trenches. A polysilicon layer is filled in the trenches, wherein the polysilicon layer is higher than the sidewalls of the trenches to be used as a gate of the MOSFET. A plurality of sources and bodies are formed in the epitaxial layer, and the bodies at both sides of the trenches. An insulating layer is covered on the substrate, wherein a plurality of metal contact windows are provided. Metal plugs are filled in the metal contact windows to form metal connections for the MOSFET.
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Co-pending U.S. Appl. No. 11/736,150, filed Apr. 17, 2007.
Co-pending U.S. Appl. No. 11/749,391, filed May 16, 2007.
Force MOS Technology Co., Ltd.
Hamre Schumann Mueller & Larson P.C.
Lopez Fei Fei Yeung
Tran Minh-Loan T
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