Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-08-21
1999-04-20
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257331, 257341, H01L 2976, H01L 2994, H01L 31062
Patent
active
058959521
ABSTRACT:
A MOSFET switch with a gate formed in a trench has a drain which includes a region of relatively high resistivity adjacent the trench and a region of relatively low resistivity further away from the trench. The drain may also include a "delta" layer having even lower resistivity in a central region of the MOSFET cell. The high resistivity region limits the strength of the electric field at the edge of the trench (particularly where there are any sharp corners) and thereby avoids damage to the gate oxide layer. The central "delta" layer helps to insure that any breakdown will occur near the center of the MOSFET cell, away from the gate oxide, and to lower the resistance of the MOSFET when it is in an on condition.
REFERENCES:
patent: 3956037 (1976-05-01), Ishii et al.
patent: 4528745 (1985-07-01), Muraoka et al.
patent: 4838993 (1989-06-01), Aoki et al.
patent: 4885260 (1989-12-01), Ban et al.
patent: 4893160 (1990-01-01), Blanchard
patent: 4894349 (1990-01-01), Saito et al.
patent: 4941026 (1990-07-01), Temple
patent: 5034785 (1991-07-01), Blanchard
patent: 5162256 (1992-11-01), Jurgensen
patent: 5168331 (1992-12-01), Yilmaz
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 5430316 (1995-07-01), Contiero et al.
patent: 5432121 (1995-07-01), Chan et al.
patent: 5545586 (1996-08-01), Koh
Shenai, K: "Optimized Trench Mosfet...."; Transactions on Electron Devices; Jun. 1992.
Shenai, K.: "Optimized Trench MOSFET Technologies for Power Devices", IEEE Transactions on Electron Devices, Jun. 1992, USA, vol. 39, No. 6, pp. 1435-1443, ISSN 0018-9383 XP000271790.
Darwish Mohamed N.
Williams Richard K.
Fahmy Wael
Siliconix incorporated
Steuber David E.
LandOfFree
Trench MOSFET with multi-resistivity drain to provide low on-res does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench MOSFET with multi-resistivity drain to provide low on-res, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench MOSFET with multi-resistivity drain to provide low on-res will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2249601