Trench MOSFET with implanted drift region

Details Trench MOSFET with implanted drift region Trench MOSFET with implanted drift region

2007-10-31

2009-12-15

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S401000, C438S242000, C438S268000

Reexamination Certificate

active

07633121

ABSTRACT:
A method to manufacture a trenched semiconductor power device including a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The method for manufacturing the trenched semiconductor power device includes a step of carrying out a tilt-angle implantation through sidewalls of trenches to form drift regions surrounding the trenches at a lower portion of the body regions with higher doping concentration than the epi layer for Rds reduction, and preventing a degraded breakdown voltage due to a thick oxide in lower portion of trench sidewall and bottom. In an exemplary embodiment, the step of carrying out the tilt-angle implantation through the sidewalls of the trenches further includes a step of carrying out a tilt angle implantation with a tilt-angle ranging between 4 to 30 degrees.

REFERENCES:
patent: 7126166 (2006-10-01), Nair et al.
patent: 7345342 (2008-03-01), Challa et al.
patent: 7465989 (2008-12-01), Hayashi
patent: 2004/0140517 (2004-07-01), Tsuchiko
patent: 2008/0073707 (2008-03-01), Darwish

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