Trench MOSFET with heavily doped delta layer to provide low on-

Details Trench MOSFET with heavily doped delta layer to provide low on- Trench MOSFET with heavily doped delta layer to provide low on-

1997-07-16

1999-12-28

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060085207

ABSTRACT:
In a vertical trench MOSFET, a layer of increased dopant concentration is formed in a lightly-doped or "drift" region which separates the body region from the drain region of the MOSFET. The layer of increased dopant concentration denominated a "delta" layer, operates to spread out the current as it emerges from the channel of the MOSFET and thereby reduces the resistance of the MOSFET when it is turned on.

REFERENCES:
patent: 4893160 (1990-01-01), Blanchard et al.
patent: 4941026 (1990-07-01), Temple
patent: 5341011 (1994-08-01), Hshieh et al.

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