Trench MOSFET with embedded junction barrier Schottky diode

Details Trench MOSFET with embedded junction barrier Schottky diode Trench MOSFET with embedded junction barrier Schottky diode

2011-01-04

2011-01-04

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S330000, C257SE21085

Reexamination Certificate

active

07863685

ABSTRACT:
A trenched semiconductor power device that includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. Each of the body regions extended between two adjacent trenched gates further having a gap exposing a top surface above an epitaxial layer above said semiconductor substrate. The trenched semiconductor power device further includes a Schottky junction barrier layer covering the top surface above the epitaxial layer between the trenched gate thus forming embedded Schottky diodes between adjacent trenched gates.

REFERENCES:
patent: 2007/0290234 (2007-12-01), Wu
patent: 2008/0265289 (2008-10-01), Bhalla et al.

Affiliated with

Also associated with

Rating

Trench MOSFET with embedded junction barrier Schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench MOSFET with embedded junction barrier Schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench MOSFET with embedded junction barrier Schottky diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2631584