Trench MOSFET with cell layout, ruggedness, truncated corners

Details Trench MOSFET with cell layout, ruggedness, truncated corners Trench MOSFET with cell layout, ruggedness, truncated corners

2006-12-04

2010-10-12

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257S372000, C257SE29257, C257SE21549

Reexamination Certificate

active

07812409

ABSTRACT:
A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells wherein the layout of the trenched gate surrounding the transistor cells as closed cells having truncated corners or rounded corners. In an exemplary embodiment, the closed cells further includes a contact metal to contact a source and a body regions wherein the contact metal the trenched gate surrounding the transistor cell have a uniform space between them. In another exemplary embodiment, the semiconductor power device further includes a contact dopant region disposed below the contact metal to enhance an electrical contact between the metal contact and the source region and the body region, and the contact dopant region having substantially circular shape to achieve a uniform space between the contact dopant region and the trenched gate surrounding the closed cells.

REFERENCES:
patent: 6031265 (2000-02-01), Hshieh
patent: 6107661 (2000-08-01), Okabe et al.
patent: 6288454 (2001-09-01), Allman et al.
patent: 6320223 (2001-11-01), Hueting et al.
patent: 6541818 (2003-04-01), Pfirsch et al.
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6867083 (2005-03-01), Imam et al.
patent: 6936890 (2005-08-01), Hueting et al.
patent: 6949432 (2005-09-01), Blanchard
patent: 7439583 (2008-10-01), Hshieh
patent: 2001/0031551 (2001-10-01), Hshieh et al.
patent: 2006/0202264 (2006-09-01), Bhalla et al.

Affiliated with

Also associated with

Rating

Trench MOSFET with cell layout, ruggedness, truncated corners does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench MOSFET with cell layout, ruggedness, truncated corners, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench MOSFET with cell layout, ruggedness, truncated corners will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4171371