Trench MOSFET with an ONO insulating layer sandwiched...

Details Trench MOSFET with an ONO insulating layer sandwiched... Trench MOSFET with an ONO insulating layer sandwiched...

2009-07-22

2010-06-01

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257S283000, C257S284000, C257S328000, C257S330000, C257S332000, C257S333000, C257SE27016, C257SE29015

Reexamination Certificate

active

07728385

ABSTRACT:
A device structure is disclosed for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET. The ESD protection module has a low temperature oxide (LTO) bottom layer whose patterning process was found to cause the gate oxide damage before. The present invention structure includes a semiconductor substrate having an active area and a termination area; numerous trench MOSFET cells disposed in the active area; numerous electrostatic discharge (ESD) diodes disposed above the semiconductor substrate in the termination area; and an insulation layer comprising Oxide/Nitride/Oxide (ONO) sandwiched between the ESD diodes and the semiconductor substrate. In one embodiment, the active area does not contain the ONO insulation layer.

REFERENCES:
patent: 2008/0042208 (2008-02-01), Hshieh

Affiliated with

Also associated with

Rating

Trench MOSFET with an ONO insulating layer sandwiched... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench MOSFET with an ONO insulating layer sandwiched..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench MOSFET with an ONO insulating layer sandwiched... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4243270