Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-03-21
2006-03-21
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S268000, C438S269000, C438S637000, C438S255000
Reexamination Certificate
active
07015125
ABSTRACT:
A trench MOSFET transistor device and a method of making the same. The device comprises: (a) a silicon substrate of first conductivity type; (b) a silicon epitaxial layer of first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than the substrate; (c) a trench extending into the epitaxial layer from an upper surface of the epitaxial layer; (d) an insulating layer lining at least a portion of the trench; (e) a conductive region within the trench adjacent the insulating layer; (f) a body region of second conductivity type provided within an upper portion of the epitaxial layer and adjacent the trench; (g) a source region of first conductivity type provided within an upper portion of the body region and adjacent the trench; (h) an upper region of second conductivity type within an upper portion of the body region and adjacent the source region, the upper region having a higher majority carrier concentration than the body region; and (i) a source contact region disposed on the epitaxial layer upper surface, wherein the source contact region comprises a doped polycrystalline silicon contact region in electrical contact with the source region as well as an adjacent metal contact region in electrical contact with the source region and with the upper region.
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Amato John E.
Hshieh Fwu-Iuan
So Koon Chong
Tsui Yan Man
General Semiconductor Inc.
Luu Chuong Anh
Mayer & Williams PC
Mayer, Esq. Stuart H.
Williams Esq. Karin L.
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