Trench lateral power MOSFET and a method of manufacturing...

Details Trench lateral power MOSFET and a method of manufacturing... Trench lateral power MOSFET and a method of manufacturing...

2006-03-14

2006-03-14

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S342000, C257S333000

Reexamination Certificate

active

07012301

ABSTRACT:
A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.

REFERENCES:
patent: 5434435 (1995-07-01), Baliga
patent: 6271080 (2001-08-01), Mandelman et al.
patent: 6316807 (2001-11-01), Fujishima et al.
patent: 2002/0179928 (2002-12-01), Fujishima
“A trench lateral power MOSFET using self-aligned trench bottom contact holes”; Naoto Fujishima et al.; IEDM '97 Digest; pp. 359-362.

Affiliated with

Also associated with

Rating

Trench lateral power MOSFET and a method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench lateral power MOSFET and a method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench lateral power MOSFET and a method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3559499