Trench lateral overflow drain antiblooming structure for virtual

Details Trench lateral overflow drain antiblooming structure for virtual Trench lateral overflow drain antiblooming structure for virtual

1997-08-21

1999-03-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257215, 257220, 257242, 257247, 257284, 257328, 257330, 438 75, 438 76, 438 77, 438 78, 438 81, 438 79, H01L 27108

Patent

active

058775200

ABSTRACT:
The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the trench 92; a gate 20 in the trench 92 overlying and separated from a portion of the semiconductor region 70; and a virtual gate 30 of the first conductivity type in the semiconductor region 70 adjacent the trench 92.

REFERENCES:
patent: 5151380 (1992-09-01), Hynecek
patent: 5286990 (1994-02-01), Hynecek
patent: 5341008 (1994-08-01), Hynecek
patent: 5453632 (1995-09-01), Hynecek et al.
patent: 5464996 (1995-11-01), Hynecek
patent: 5552620 (1996-09-01), Lu et al.

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