Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-16
2000-08-01
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257510, 257513, H01L 2976
Patent
active
060970723
ABSTRACT:
An integrated circuit device includes a substrate having a planar surface and isolating trenches etched from the substrate. The isolating trenches form edges and corners with the surface of the substrate. An oxide covers the surface and fills the isolating trenches. The oxide has a thickness at the edges and corners which is greater than its thickness in other areas of the surface of the substrate. Field effect transistors having gate electrodes disposed on the oxide over the edges and corners and over a portion of the other areas of the surface are formed. Formation of parasitic edge transistors is suppressed and thinning of the oxide at the trench edges and corners is prevented because the oxide at the edges and corners is raised with respect to the other areas of the surface, thereby elevating the gate electrode at the edge and corner.
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Advanced Micro Devices
Crane Sara
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