Trench-isolation type semiconductor device

Details Trench-isolation type semiconductor device Trench-isolation type semiconductor device

1997-05-09

1999-06-22

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, 257506, 257508, H01L 2976, H01L 2994

Patent

active

059145170

ABSTRACT:
A semiconductor device and a method of manufacturing the same. The semiconductor device comprises: a semiconductor substrate; an impurity injection layer formed in a surface of the semiconductor substrate; and a trench formed in the impurity injection layer for defining a plurality of element formation regions isolated one another by the trench, wherein the impurity injection layer extends to a depth inside the semiconductor substrate deeper at a first area below the trench than at a second area below each of the element formation regions.

REFERENCES:
patent: 4624047 (1986-11-01), Tani
patent: 5225707 (1993-07-01), Komaru et al.
patent: 5365082 (1994-11-01), Gill et al.
Gilbert et al., Latch-up Performance of a Sub-0.5 Micron Inter-well Deep Trench Technology, IEDM 1993, pp. 731-734.

Affiliated with

Also associated with

Rating

Trench-isolation type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench-isolation type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench-isolation type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1709575