1985-10-03
1987-04-07
Munson, Gene M.
357 2311, 357 54, 357 59, H01L 2704, H01L 2934, H01L 2904, H01L 2978
Patent
active
046564977
ABSTRACT:
A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.
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Rung et al., "Deep Trench Isolated CMOS Devices", IEEE Int. Electron Devices Meeting (12/82), pp. 237-240.
Antipov, "Prevention of Birdbeak Formation", IBM Technical Disclosure Bulletin, vol. 23, No. 11, Apr. 1981, pp. 4917-4919.
Kaya Denise A.
Mundt Randall S.
Rogers Steven H.
Hawk Jr. Wilbert
Munson Gene M.
NCR Corporation
Salys Casimer K.
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