Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S506000, C257S510000, C438S207000
Reexamination Certificate
active
07968948
ABSTRACT:
A trench isolation structure in a semiconductor device is provided. A semiconductor substrate has cell regions and peripheral circuit regions. First trenches have a predetermined depth and are formed in the semiconductor substrate at the cell regions. A first sidewall oxide film is formed overlying the first trenches. A first liner nitride film is formed overlying the first sidewall oxide film. Second trenches have a predetermined depth and are formed in the semiconductor substrate at the peripheral circuit regions. A second sidewall oxide film is formed overlying the second trenches. An oxide film fills the first overlying second trenches. A second liner nitride film formed on the filling oxide film. The second liner nitride film is separated from the sidewalls of the first and second trenches.
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Doan Theresa T
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
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