Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-12-09
2000-09-05
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257369, 257374, 257397, 257403, 257407, 257412, 257 66, H01L 2120
Patent
active
061147419
ABSTRACT:
An isolation structure is provided that includes a substrate (10), a refill material such as a refill oxide (22), a gate dielectric such as a gate oxide layer (24), and a gate conductor layer such a polysilicon gate layer (26). The substrate (10) has an active region (12), an active region (14), and a trench region provided between the active region (12) and the active region (14). The active region (14) includes a top corner (32) that is provided where an upper surface of the active region (14) and the trench wall of the trench region that is adjacent to the active region (14) meet. The refill oxide (22) is positioned within the trench region and extends to cover at least a portion of the top corner. The gate oxide layer (24) is provided on the upper surface of the active region (14). The polysilicon gate layer (26) is provided on an upper surface of the gate oxide layer (24).
REFERENCES:
patent: 4578128 (1986-03-01), Mundt et al.
patent: 5436189 (1995-07-01), Beasom
patent: 5661311 (1997-08-01), Takamura et al.
patent: 5721174 (1998-02-01), Peidous
patent: 5861104 (1999-01-01), Omid-Zohoor
patent: 5952701 (1999-09-01), Bulucea et al.
Joyner Keith A.
Loewenstein Lee M.
Abraham Fetsum
Brady Wade James
Donaldson Richard L.
Garner Jacqueline J.
Texas Instruments Incorporated
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