Trench isolation methods utilizing composite oxide films

Details Trench isolation methods utilizing composite oxide films Trench isolation methods utilizing composite oxide films

1998-02-12

2000-03-14

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438692, H01L 21762

Patent

active

060372370

ABSTRACT:
A multilayer oxide film, including at least two oxide layers having differing stress characteristics, is used in a trench isolation method. Preferably, at least a first one of the oxide layers has tensile stress characteristics and at least a second one of the oxide layers has compressive stress characteristics. Thus, during densification, the overall stress can be reduced. The multilayer film is preferably formed by sequentially stacking first and second oxide films which have opposite stress characteristics. In one example, the first oxide film is a tetra-ethyl-orthosilicate (TEOS)-O.sub.3 based chemical vapor deposition (CVD) oxide film and the second oxide film is selected from the group consisting of TEOS-based plasma-enhanced CVD (PECVD) oxide film, an SiH.sub.4 based PECVD oxide film and a high density plasma (HDP) oxide film. In another embodiment, the first oxide film is an HDP oxide film and the second film is a TEOS-O.sub.3 based CVD oxide film. Accordingly, integrated circuits with reduced stress may be fabricated, thereby allowing increased performance of the integrated circuits.

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Park et al., "Stress Minimization in Deep Sub-Micron Full CMOS Devices by Using an Optimized Combination of the Trench Filling CVD Oxides," 1997 IEEE, IEDM 97-669-672, 27.4.1-27.4.4.
Shiozawa et al., "Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process," Jpn. J. Appl. Phys., vol. 35 (1996), pp. L1625-L1627, Part 2, No. 12B, Dec. 15, 1996.

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