Trench isolation method for semiconductor device

Details Trench isolation method for semiconductor device Trench isolation method for semiconductor device

1998-07-29

2000-09-19

Nelms, David

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

438434, 438445, 437 67, 437 69, 437 70, H01L 2176

Patent

active

061211109

ABSTRACT:
A trench isolation method is provided. In the trench isolation method, a pad oxide film, an oxidative film and an etching mask film are formed on a semiconductor substrate in sequence, and then a trench is formed in a field region of the semiconductor substrate. A oxide film is formed at the inner wall of the trench and the side walls of the oxidative film by oxidizing the semiconductor substrate. After filling the trench with a dielectric material, the pad oxide film, oxidative film and etching mask film formed in the active region are removed.

REFERENCES:
patent: 5395790 (1995-03-01), Lur
patent: 5563091 (1996-10-01), Lee
patent: 5683932 (1997-11-01), Bashir et al.
patent: 5721174 (1998-02-01), Pedious
patent: 5731221 (1998-03-01), Kwon
patent: 5783476 (1998-07-01), Arnold
patent: 5913132 (1999-06-01), Tsai
patent: 5915191 (1999-06-01), Jun

Affiliated with

Also associated with

Rating

Trench isolation method for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench isolation method for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench isolation method for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072293