Trench isolation for both large and small areas by means of sili

Details Trench isolation for both large and small areas by means of sili Trench isolation for both large and small areas by means of sili

1993-09-27

1994-05-03

Thomas, Tom

Fishing, trapping, and vermin destroying

437 63, 437 64, 148DIG50, H01L 2176

Patent

active

053087860

ABSTRACT:
A first insulating layer is deposited over the surface of a silicon substrate. Those portions of the first insulating layers not covered by a mask pattern are etched through to the silicon substrate so as to provide a plurality of wide and narrow openings exposing portions of the silicon substrate that will form the device isolation regions. A second insulating layer is deposited overlying the patterned first insulating layer. A layer of an aluminum-silicon alloy is deposited overlying the second insulating layer. The aluminum-silicon layer is etched away whereby silicon nodules are formed on the surface of the second insulating layer. The second insulating layer is etched through to the first insulating layer where it exists and to the silicon substrate surface where the substrate is exposed within the wide and narrow openings. A first set of narrow trenches is etched into the exposed portions of the silicon substrate within the wide and narrow openings using the silicon nodules as a mask. A third insulating layer is deposited over the surface of the substrate and within the first set of trenches. The third insulating layer is etched back to leave spacers on the sidewalls of the first set of trenches which fill the trenches. A second set of trenches is etched into the silicon substrate not covered by a mask wherein the second set of trenches is immediately contiguous with the first set of trenches and wherein the first and second sets of trenches together correspond to the wide and narrow openings.

REFERENCES:
patent: 4211582 (1980-07-01), Horng et al.
patent: 4222792 (1980-09-01), Lever et al.
patent: 4656497 (1987-04-01), Rogers et al.
patent: 4836885 (1989-06-01), Breiten et al.
patent: 4868136 (1989-09-01), Ravaglia
patent: 4876216 (1989-10-01), Tobias et al.
patent: 4988639 (1991-01-01), Aomura
patent: 5017999 (1991-05-01), Roisen et al.
patent: 5096848 (1992-03-01), Kawamura
patent: 5108946 (1992-04-01), Zdebel et al.
patent: 5130268 (1992-07-01), Liou et al.
patent: 5175122 (1992-12-01), Wang et al.
VLSI Technology, International Edition, by S. M. Sze, McGraw-Hill Book Co, pp. 473-474 and 476-477.
"Formation of Silicon Nitride At A Si-SiO.sub.2 Interface during Local Oxidation of Silicon & during Heat-Treatment of Oxidized Silicon in NH.sub.2 Gas" by Kooi, J. G. van Lierop and J. A. Appels, J. Electrochem Soc. Solid-State Science and Technology, Jul. 1976, pp. 1117-1120.

Affiliated with

Also associated with

Rating

Trench isolation for both large and small areas by means of sili does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench isolation for both large and small areas by means of sili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench isolation for both large and small areas by means of sili will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2114773