Trench isolated transistors, trench isolation structures,...

Details Trench isolated transistors, trench isolation structures,... Trench isolated transistors, trench isolation structures,...

2005-05-17

2005-05-17

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S396000, C257S397000, C257S398000, C257S399000, C257S400000, C257S510000, C257S519000, C257S647000, C257S648000

Reexamination Certificate

active

06894354

ABSTRACT:
An isolation trench in a semiconductor includes a first isolation trench portion having a first depth and having a first sidewall intersecting a surface of the semiconductor at a first angle. A second isolation trench portion extends within and below the first isolation trench portion. The second isolation trench portion has a second depth and includes a second sidewall. The second sidewall intersects the first sidewall at an angle with respect to the surface that is greater than the first angle. A dielectric material fills the first and second isolation trench portions.

REFERENCES:
patent: 5536675 (1996-07-01), Bohr
patent: 5801083 (1998-09-01), Yu et al.
patent: 5874317 (1999-02-01), Stolmeijer
patent: 5915191 (1999-06-01), Jun
patent: 5969393 (1999-10-01), Noguchi
patent: 5994198 (1999-11-01), Hsu et al.
patent: 6034409 (2000-03-01), Sakai et al.
patent: 6081662 (2000-06-01), Murakami et al.
patent: 6087705 (2000-07-01), Gardner et al.
patent: 6154417 (2000-11-01), Kim
patent: 6171924 (2001-01-01), Wang et al.
patent: 6258688 (2001-07-01), Tsai
patent: 6274457 (2001-08-01), Sakai et al.
patent: 6342428 (2002-01-01), Zheng et al.
patent: 6350655 (2002-02-01), Mizuo
patent: 6355540 (2002-03-01), Wu
patent: 6380095 (2002-04-01), Liu et al.
patent: 6383931 (2002-05-01), Flanner et al.
patent: 01-282815 (1989-11-01), None
Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies, Seung-Ho Lee et al., Jpn. J. Appl. Phys. vol. 37 (1998), pp. 1222-1227.
Impact of Shallow Trench Isolation on Reliability of Buried- and Surface-Chanel sub-μm PFET, William Tonti et al., 1995 IEEE. pp. 24-29.
Subbreakdown Drain Leakage Current in MOSFET, J. Chen et al., 1987 IEEE, pp. 515-517.
Shallow Trench Isolation for advanced ULSI CMOS Technologies, M. Nandakumar et al, Silicon Technology Development, Kilby Center, Texas Instruments, Undated, 4 pages.

Affiliated with

Also associated with

Rating

Trench isolated transistors, trench isolation structures,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench isolated transistors, trench isolation structures,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench isolated transistors, trench isolation structures,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3373904