Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-16
1998-08-25
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257374, 257510, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057985537
ABSTRACT:
A method for improving the subthreshold leakage characteristics of a trench-isolated FET device is described. This method involves first forming a vertical slot within a stack structure disposed on an oxide-covered silicon substrate, and then forming spacers on the sidewalls of the slot. A trench is then etched in the substrate. Removal of the spacers uncovers a horizontal ledge on the exposed surfaces of the oxide-covered substrate, adjacent the trench. The ledge is then perpendicularly implanted with a suitable dopant, thereby suppressing edge conduction in the device. Articles prepared by this method are also described.
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Furukawa Toshiharu
Mandelman Jack Allan
Tonti William R.
Cao Phat X.
Chaudhuri Olik
International Business Machines - Corporation
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