Trench isolated capacitive micromachined ultrasonic...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257SE29324, C257S595000, C438S053000

Reexamination Certificate

active

07741686

ABSTRACT:
A one or two-dimensional capacitive micro-machined ultrasonic transducer (CMUT) array with supporting frame is provided. The CMUT array has at least three array elements deposited on a conductive substrate. The invention also has at least one CMUT cell in the array element, a conductive top layer deposited to a top side of the element, and a conductive via disposed within the elements. The via is isolated from the conductive top layer and conducts with the substrate. There are at least two isolation trenches in the conductive substrate, and the trenches are disposed between adjacent vias to conductively isolating the vias. A substrate region between the trenches forms a mechanical support frame. At least one conductive electrode is deposited to a bottom surface of the conductive substrate, where the electrode conducts with the via. The support frame eliminates the need for a carrier wafer in the process steps.

REFERENCES:
patent: 6836020 (2004-12-01), Cheng et al.
patent: 2002/0030728 (2002-03-01), Susukida et al.
patent: 2002/0154381 (2002-10-01), Bishop et al.
patent: 2004/0236223 (2004-11-01), Barnes et al.

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