Trench insulated gate field effect transistor

Details Trench insulated gate field effect transistor Trench insulated gate field effect transistor

2004-11-26

2008-08-05

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C257SE29262

Reexamination Certificate

active

07408223

ABSTRACT:
The invention relates to a trench MOSFET with drain (8), sub-channel region (10) body (12) and source (14). The sub-channel region is doped to be the same conductivity type as the body (12), but of lower doping density. A field plate electrode (34) is provided adjacent to the sub-channel region (10)10and a gate electrode (32) next to the body (12).

REFERENCES:
patent: 2002/0036319 (2002-03-01), Baliga
Peake et al., “A novel high side FET with reduced switching losses,” Power Semiconductor Devices and ICs, 2003. Proceedings. 2003 IEEE 15th International Symposium. Publication Date: Apr. 17, 2003.

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