Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-16
2000-12-19
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, 257332, 257302, 438270, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
061630527
ABSTRACT:
A combination vertical MOSFET and JFET device (18,22) is formed in a mesa (20,24) of semiconductor material. A top gate (44,68) of the device is formed by creating a preferably annular trench (36,58) that extends downwardly from the surface of the semiconductor layer, creating a thin gate insulator (41,62) on the bottom and sidewalls of this trench, and filling the trench with highly doped polysilicon. A buried gate region (28,50) is formed by implanting the semiconductor layer, prior to top gate formation, such that the buried gate region is laterally coextensive with the mesa. An upper boundary (29,54) of the buried gate region is spaced below the bottom of the trench and spaced from the semiconductor surface. Upon application of a suitable voltage, the buried gate region and the top gate region coact to invert the conductivity type of the channel region, permitting transistor operation between the source region and the drain region.
REFERENCES:
patent: 4827321 (1989-05-01), Baliga
patent: 4914739 (1990-04-01), Malhi
patent: 4967243 (1990-10-01), Baliga et al.
patent: 5208657 (1993-05-01), Chatterjee et al.
patent: 5225697 (1993-07-01), Malhi et al.
patent: 5504357 (1996-04-01), Kim et al.
patent: 5821583 (1998-10-01), Hshieh et al.
patent: 5864158 (1999-01-01), Liu et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6084264 (2000-07-01), Darwish
Liu Yowjuang W.
Wollesen Donald L.
Advanced Micro Devices , Inc.
Owens Douglas W.
Thomas Tom
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