Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-30
1999-12-07
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257328, 257331, 257409, H01L 2978, H01L 2949
Patent
active
059988363
ABSTRACT:
A power MOSFET includes a trenched gate which defines a plurality of MOSFET cells. A protective diffusion is created, preferably in an inactive cell, so as to form a diode that is connected in parallel with the channel region in each of the MOSFET cells. The protective diffusion, which replaces the deep central diffusion taught in U.S. Pat. No. 5,072,266, prevents impact ionization and the resulting generation of carriers near the corners of the gate trench, which can damage or rupture the gate oxide layer. Moreover, the diode can be designed to have a breakdown voltage which limits the strength of the electric field across the gate oxide layer. The elimination of a deep central diffusion permits an increase in cell density and improves the on-resistance of the MOSFET.
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Jackson, Jr. Jerome
Siliconix incorporated
Steuber David E.
LandOfFree
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