Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-07
2000-04-04
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257470, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
060464704
ABSTRACT:
A vertical N-channel trenched-gate power MOSFET includes an integral temperature detection diode. The diode includes an N+ region which serves as the cathode and which is formed within a tub of P-type material, which serves as the anode. The N+ region is separated from the trench. The anode of the temperature detection diode may be shorted to the source or may be separately biased. The temperature of the MOSFET is monitored by supplying a current through the diode in the forward direction and measuring the voltage across the forward-biased diode. In an alternative embodiment, a pair of N+ regions are formed within the P-tub, constituting a diode pair, and the temperature is detected by monitoring the difference in the voltages across the diodes. An overtemperature detection unit compares the voltage across the diode or diodes with a reference voltage and provides an output which can be used to turn the MOSFET off when the temperature reaches a predetermined level.
REFERENCES:
patent: 4896196 (1990-01-01), Blanchard et al.
patent: 5378914 (1995-01-01), Ohzu et al.
Grabowski Wayne
Williams Richard K.
Meier Stephen D.
Siliconix incorporated
Steuber David E.
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