Trench gate type transistor

Details Trench gate type transistor Trench gate type transistor

2008-09-26

2011-12-13

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21410, C438S270000

Reexamination Certificate

active

08076720

ABSTRACT:
The invention provides a trench gate type transistor in which the gate leakage current is prevented and the gate capacitance is reduced. A trench is formed in an N− type semiconductor layer. A thin silicon oxide film is formed on a region of the N− type semiconductor layer for the active region of the transistor in the trench. On the other hand, a silicon oxide film which is thicker than the silicon oxide film is formed on a region not for the active region. Furthermore, a leading portion extending from inside the trench onto the outside thereof forms a gate electrode contacting the silicon oxide film. This provides a long distance between the gate electrode at the leading portion and the corner portion of the N− type semiconductor layer, thereby preventing the gate leakage current and reducing the gate capacitance.

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