Trench-gate MOSFET with capacitively depleted drift region

Details Trench-gate MOSFET with capacitively depleted drift region Trench-gate MOSFET with capacitively depleted drift region

2011-07-12

2011-07-12

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29257, C438S272000

Reexamination Certificate

active

07977742

ABSTRACT:
A trench-gate metal oxide semiconductor field-effect transistor (MOSFET) includes a field plate that extends into a drift region of the MOSFET. The field plate, which is electrically coupled to a source region, is configured to deplete the drift region when the MOSFET is in the OFF-state. The field plate extends from a top surface of a device substrate, which comprises an epitaxial layer formed on a silicon substrate. The field plate has a depth greater than 50% of a thickness of the epitaxial layer. For example, the field plate may extend to a full depth of the drift region. The field plate allows for relatively easy interconnection from the top surface of the device substrate, simplifying the fabrication process.

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