Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1986-06-26
1987-09-15
Schor, Kenneth M.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156657, 1566591, H01L 21308
Patent
active
046937811
ABSTRACT:
A process is disclosed for fabricating a semiconductor device which includes a trench formed at the surface of the device substrate. The surface of the device substrate is oxidized and the oxide is patterned to form an opening which exposes a portion of the underlying surface. Ions are implanted through the opening and into the surface to form a damaged surface region which is coincident with the opening and extends under the edge of the oxide. A trench is etched by reactive ion etching using the opening in the oxide as an etch mask. The substrate, including the walls of the trench and the ion implant damaged surface portion under the edge of the oxide, is thermally oxidized. The oxidation rate is enhanced by the damage and causes a thicker oxide to grow in the damaged region which forms a collar around the intersection of the trench with the surface. Upon removing the oxide, the intersection of the trench with the surface is characterized by a rounded corner caused by the enhanced oxidation in that location during the oxidation.
REFERENCES:
J. M. Blum et al., "Method for Making Three-Dimensional Microstructures in Silicon, Particularly a Buried Oxide Structure for Bipolar Integrated Circuits", IBM Technical Disclosure Bulletin, vol. 21, No. 9, 2/1979.
Alvis John R.
Leung Howard K. H.
Nguyen Bich-Yen
Schmiesing John
Fisher John A.
Motorola Inc.
Myers Jeffrey Van
Schor Kenneth M.
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