Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-02-01
2011-02-01
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21564
Reexamination Certificate
active
07879663
ABSTRACT:
A semiconductor device is formed on a semiconductor layer. A gate dielectric layer is formed over the semiconductor layer. A layer of gate material is formed over the gate dielectric layer. The layer of gate material is patterned to form a gate structure. Using the gate structure as a mask, an implant into the semiconductor layer is performed. To form a first patterned gate structure and a trench in the semiconductor layer surrounding a first portion and a second portion of the semiconductor layer and the gate, an etch through the gate structure and the semiconductor layer is performed. The trench is filled with insulating material.
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Abeln Glenn C.
Grant John M.
Hall Mark D.
Clingan, Jr. James L.
Crawford Latanya
Freescale Semiconductor Inc.
Hill Susan C.
Landau Matthew C
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