Trench filling method employing silicon liner layer and gap fill

Details Trench filling method employing silicon liner layer and gap fill Trench filling method employing silicon liner layer and gap fill

1997-03-17

1999-02-09

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

H01L 2176

Patent

active

058693840

ABSTRACT:
A method for filling a trench within a substrate. There is first provided a substrate having a trench formed within the substrate. There is then formed over the substrate and within the trench a silicon layer. The silicon layer has an aperture formed therein where the silicon layer is formed within the trench. There is then formed upon the silicon layer and filling the aperture a gap filling silicon oxide trench fill layer. The gap filling silicon oxide trench fill layer is formed through an ozone assisted sub-atmospheric pressure chemical vapor deposition (SACVD) method. Finally, the substrate is annealed thermally in an oxygen containing atmosphere to form within the trench an oxidized silicon layer from the silicon layer, where the oxidized silicon layer is contiguous with a densified gap filling silicon oxide trench fill layer simultaneously formed from the gap filling silicon oxide trench fill layer. Through the method, the densified gap filling silicon oxide trench fill layer is formed without a surface sensitivity.

REFERENCES:
patent: 4666556 (1987-05-01), Fulton et al.
patent: 5346584 (1994-09-01), Nasr et al.
patent: 5416041 (1995-05-01), Schwalke et al.
patent: 5472904 (1995-12-01), Figura et al.
patent: 5492858 (1996-02-01), Bose et al.

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