Trench field effect transistor and method of making it

Details Trench field effect transistor and method of making it Trench field effect transistor and method of making it

2005-02-23

2009-08-25

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257SE29131, C438S270000, C438S259000

Reexamination Certificate

active

07579649

ABSTRACT:
Consistent with an example embodiment, a trench FET has source regions arranged above insulated gates in trenches. A body region of opposite conductivity type is arranged between the trenches and a body region is arranged above the body region. Source contact metallisation contacts the source and body contact region. In this way a small cell pitch can be achieved.

REFERENCES:
patent: 5708286 (1998-01-01), Uesugi et al.
patent: 7253475 (2007-08-01), Schaffer

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