Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-04
2005-01-04
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S270000, C257S271000, C257S328000, C257S329000, C257S330000, C257S331000, C257S341000
Reexamination Certificate
active
06838735
ABSTRACT:
A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with conductive polysilicon. Spaced narrow polysilicon strips overlie the silicon surface and connects adjacent trenches to one another. The source contact is made at a location remote from the trenches and between the rows of trenches. The trenches are 1.8 microns deep, are 0.6 microns wide and are spaced by about 0.6 microns or greater. The device has a very low figure of merit and is useful especially in low voltage circuits.
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Kinzer Daniel M.
Pavier Mark
Sodhi Ritu
Flynn Nathan J.
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
Sefer Ahmed N.
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