Trench etch process for a single-wafer RIE dry etch reactor

Details Trench etch process for a single-wafer RIE dry etch reactor Trench etch process for a single-wafer RIE dry etch reactor

1987-07-08

1988-11-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156648, 156653, 156657, 1566591, 156662, 20419237, 20419223, 252 791, 427 38, 437228, 437234, 437238, 437241, H01L 21306, B44C 122, C03C 1500, B05D 306

Patent

active

047847204

ABSTRACT:
A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.

REFERENCES:
patent: 4533430 (1985-08-01), Bower
patent: 4690729 (1987-09-01), Douglas

Affiliated with

Also associated with

Rating

Trench etch process for a single-wafer RIE dry etch reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench etch process for a single-wafer RIE dry etch reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench etch process for a single-wafer RIE dry etch reactor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1102028