Trench etch process for a single-wafer RIE dry etch reactor

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156648, 156651, 156653, 156657, 1566611, 156662, 20419237, 252 791, 427 38, 437228, H01L 21306, B44C 122, C03C 1500, C03C 2506

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048550175

ABSTRACT:
A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.

REFERENCES:
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4252579 (1981-02-01), Ho-Riseman et al.
patent: 4326332 (1982-04-01), Kenney
patent: 4521275 (1985-06-01), Purdes
patent: 4533430 (1985-08-01), Bower
patent: 4580331 (1986-04-01), Soclof
patent: 4635090 (1987-01-01), Tamaki et al.
patent: 4683486 (1987-07-01), Chatterjee
Ti's Trench Technology Moves Into The Factory, Electronics, Jul. 9, 1987 pp. 75-77.

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