Trench etch endpoint detection by LIF

Details Trench etch endpoint detection by LIF Trench etch endpoint detection by LIF

1986-06-25

1987-06-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156653, 156656, 156657, 156662, 156345, 204298, 20419233, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

046750720

ABSTRACT:
Laser induced fluorescence is utilized to detect and control the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to adjacent layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are automatically de-energized.

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