Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-11
1999-08-03
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257318, 365149, 36518501, H01L 2980
Patent
active
059329084
ABSTRACT:
A two-device nonvolatile memory cell is described. The cell comprises a planar FET and a vertical FET in series. The vertical FET has a floating gate that is predominantly capacitively coupled to a buried n well that serves as the control electrode. The structure is very similar to a trench DRAM cell, and the nonvolatile memory cell can be integrated onto a DRAM chip.
REFERENCES:
patent: 3660819 (1972-05-01), Frohman-Bentchkowsky
patent: 3843954 (1974-10-01), Hansen et al.
patent: 4845538 (1989-07-01), Hazani
patent: 5016068 (1991-05-01), Mori
patent: 5196722 (1993-03-01), Bergendahl et al.
patent: 5598367 (1997-01-01), Noble
Crane Sara
International Business Machines - Corporation
Leas James M.
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