Trench diffusion isolation in semiconductor devices

Details Trench diffusion isolation in semiconductor devices Trench diffusion isolation in semiconductor devices

2007-02-21

2009-06-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S433000, C438S449000, C438S424000, C438S508000

Reexamination Certificate

active

07541260

ABSTRACT:
A semiconductor structure is formed comprising a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The trenches are filled with semiconductor material. Other embodiments may be described and claimed.

REFERENCES:
patent: 6103578 (2000-08-01), Uenishi et al.
patent: 2004/0043565 (2004-03-01), Yamaguchi et al.
patent: 2006/0205174 (2006-09-01), Hshieh et al.

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