Trench capacitor with epi buried layer

Details Trench capacitor with epi buried layer Trench capacitor with epi buried layer

1998-06-26

1999-08-31

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, H01L 27108, H01L 2776, H01L 31119

Patent

active

059457040

ABSTRACT:
A trench capacitor with an epi layer in the lower portion of the trench. The epi layer serves as the buried plate of the trench capacitor. A diffusion region surrounds the lower portion of the trench to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation.

REFERENCES:
patent: 5629226 (1997-05-01), Ohtsuki
patent: 5731226 (1998-03-01), Lin et al.

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