Trench capacitor with buried strap

Details Trench capacitor with buried strap Trench capacitor with buried strap

2005-02-08

2005-02-08

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S302000

Reexamination Certificate

active

06853025

ABSTRACT:
A trench capacitor with improved strap is disclosed. The strap is located above the top surface of the capacitor. The top surface of the trench capacitor which is formed by the top surfaces of the collar and storage plate, is planar. By locating the strap on a planar surface, the divot present in conventional strap processes is avoided. This results in improved strap reliability and device performance.

REFERENCES:
patent: 6200851 (2001-03-01), Arnold
patent: 6326275 (2001-12-01), Harrington et al.
patent: 6368912 (2002-04-01), Chang et al.
patent: 6391705 (2002-05-01), Hsiao et al.
patent: 6579759 (2003-06-01), Chudzik et al.
patent: 6727141 (2004-04-01), Bronner et al.
patent: 6740920 (2004-05-01), Chidambarrao et al.

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