Trench capacitor structures

Details Trench capacitor structures Trench capacitor structures

1997-04-30

1998-09-08

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Capacitors

365154, 257301, 257903, G11C 1124

Patent

active

058054944

ABSTRACT:
An optimized trench capacitor structure which is useful as a decoupling capacitor or a storage capacitor can be manufactured without added process complexity. As an on-chip decoupling trench capacitor structure, the structure reduces the series resistance to outer and inner plates and results in an acceptable RC delay, while maintaining a high capacitance per unit area. As a storage capacitor with a buried shield, the trench capacitor structure exhibits high immunity to alpha particle and cosmic radiation induced failures. The trench capacitor structure which includes a buried n-well in a silicon substrate. A trench is formed in the substrate and extends through the buried n-well. A dielectric film is formed on an inner surface of the trench, and an inner plate formed as a polysilicon fill within the trench is connected to a surface n+ film formed during definition of peripheral source/drain contacts of the integrated circuit. An outer plate of the capacitor in the form of an out diffusion from the trench provides a low resistance electrical contact with the substrate. A number of these capacitors can be combined in a very efficient X-Y array of decoupling capacitors.

REFERENCES:
patent: 5555520 (1996-09-01), Sudo et al.
patent: 5559666 (1996-09-01), Figura et al.
patent: 5598367 (1997-01-01), Noble
patent: 5717628 (1998-02-01), Hammerl et al.

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