Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-24
2006-01-24
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S309000, C257S302000, C257S296000, C257S300000, C257S304000, C257S305000, C438S242000, C438S243000, C438S426000, C438S388000
Reexamination Certificate
active
06989561
ABSTRACT:
Afin-type trench capacitor structure includes a buried plate diffused into a silicon substrate. The buried plate, which surrounds a bottle-shaped lower portion of the trench capacitor structure, is electrically connected to an upwardly extending annular poly electrode, thereby enabling the buried plate and the annular poly electrode to constitute a large-area capacitor electrode of the trench capacitor structure. A capacitor storage node consisting of a surrounding conductive layer, a central conductive layer and a collar conductive layer encompasses the upwardly extending annular poly electrode. A first capacitor dielectric layer isolates the capacitor storage node from the buried plate. A second capacitor dielectric layer and a third capacitor dielectric layer isolate the upwardly extending annular poly electrode from the capacitor storage node.
REFERENCES:
patent: 5365097 (1994-11-01), Kenney
patent: 6194755 (2001-02-01), Gambino et al.
patent: 6271079 (2001-08-01), Wei et al.
patent: 6319787 (2001-11-01), Enders et al.
patent: 6440813 (2002-08-01), Collins et al.
patent: 6448131 (2002-09-01), Cabral et al.
Liao Sam
Lin Shian-Jyh
Yu Chia-Sheng
Erdem Fazli
Flynn Nathan J.
Hsu Winston
Nanya Technology Corp.
LandOfFree
Trench capacitor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench capacitor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench capacitor structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3538958